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RDS070N03

Features: 1) Low Qg.2) Low on-resistance.3) Excellent resistance to damage from static electricity.Application·Silicon N-channel·MOS FETSpecifications Parameter Symbol Limits UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous ID 7 ...

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RDS070N03: Features: 1) Low Qg.2) Low on-resistance.3) Excellent resistance to damage from static electricity.Application·Silicon N-channel·MOS FETSpecifications Parameter Symbol Limits UNIT Drain-S...

RDS070N03 Data Sheet

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Part Number:
RDS070N03
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

1) Low Qg.
2) Low on-resistance.
3) Excellent resistance to damage from static electricity.


Application

·Silicon N-channel
·MOS FET


Specifications

Parameter Symbol Limits UNIT
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Drain Current Continuous ID 7 A
Pulsed IDP * 28 A
Reverse Drain Current Continuous DR 7 A
Pulsed DRP * 28 A
Source Current
(Body Diode)		 Continuous IS 1.6 A
Pulsed EAS * 6.4 A
Total Power Dissipation (Tc=25) PD 2.5 W
Channel Temperature Tch 150
Storage Temperature Tstg −55 to +150

*Pw10s, Duty cycle1%


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