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RF1200

Features: · Low Insertion Loss 0.3dB at 1GHz· High Isolation 26dB at 1GHz· Low Control Voltage 2.6V to 5.0V· Harmonics H2: -80dBc@1GHz· GaAs pHEMT ProcessApplication· Cellular Handset Applications· Antenna Tuning Applications· Multi-Mode GSM, W-CDMA Applications· IEEE802.11b/g WLAN Applications· G...

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SeekIC No. : 004476119 Detail

RF1200: Features: · Low Insertion Loss 0.3dB at 1GHz· High Isolation 26dB at 1GHz· Low Control Voltage 2.6V to 5.0V· Harmonics H2: -80dBc@1GHz· GaAs pHEMT ProcessApplication· Cellular Handset Applications· ...

RF1200 Data Sheet

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Part Number:
RF1200
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

· Low Insertion Loss 0.3dB at 1GHz
· High Isolation 26dB at 1GHz
· Low Control Voltage 2.6V to 5.0V
· Harmonics H2: -80dBc@1GHz
· GaAs pHEMT Process




Application

· Cellular Handset Applications
· Antenna Tuning Applications
· Multi-Mode GSM, W-CDMA Applications
· IEEE802.11b/g WLAN Applications
· GSM/GPRS/EDGE Switch Applications
· Cellular Infrastructure Applications




Pinout

Connection Diagram




Specifications

Rating Value Unit
Voltage 7.0 V
Maximum Input Power (0GHz to
2.5GHz)		 +36 dBm
Operating Temperature -30 to +85 °C
Soldering Temperature -35 to +100 °C


Frequency (MHz) Low Freq. to 2500
Insertion/Conversion Loss (dB) 0.5 @2GHz
Vcc (V) 2.65 to 5.00
Package/Size (Dim in mm) QFN, 6-pin, 2x2





Description

The RF1200 is a single-pole double-throw (SPDT) high power switch specially designed to handle GSM power applications. The RF1200 features low insertion loss, low control voltage, high linearity, and very good harmonic characteristics. It is fabricated with 0.5m GaAs pHEMT process, and is packaged in a very compact 2mmx2mm, 6-pin, leadless QFN package.






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