RF1K49093

Packaging :
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Drain-Source Breakdown Voltage : - 12 V
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 0.13 Ohms
Continuous Drain Current : 2.5 A
Package / Case : SOP-8


Features:

• 2.5A, 12V
• rDS(ON) = 0.130W
• Temperature Compensating PSPICE® Model
• On-Resistance vs Gate Drive Voltage Curves
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Breakdown Voltage (Note 1)	VDSS	-12	V
Drain to Gate Voltage (RGS = 20kW) (Note 1)	VDGR	-12	V
Gate to Source Voltage	VGS	±10	A
Drain Current Continuous (Pulse width = 5s) Continuous (Pulse width = 5s)	ID IDM	2.5 Refer to Peak Current Curve	A
Pulsed Avalanche Rating (Figure 6)	EAS	Refer to UIS Curve	A
Power Dissipation TA = 25. Derate Above 25	PD	2 0.016	V W/
Operating and Storage Temperature	TJ , TSTG	-55 to 150
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	T L Tpkg	300 260

Description

This Dual P-Channel power MOSFET RF1K49092 is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. RF1K49092 is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. RF1K49092 achieves full rated conduction at a gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.