RF1K49154

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Dual Dual Drain
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.13 Ohms
Continuous Drain Current : 2 A
Package / Case : SOP-8


Features:

• 2A, 60V
• r _DS(ON) = 0.130
• Temperature Compensating PSPICE^® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1)	VDSS	60	V
Drain to Gate Voltage (RGS = 20kW)(Note 1)	VDGR	60	V
Gate to Source Voltage	VGS	±20	V
Drain Current Continuous (Pulse width = 5s)	ID	2	A
Pulsed (Figure 5)	IDM	Refer to Peak Current Curve	A
Single Pulse Avalanche Rating(Figure 6)	EAS	Refer to UIS Curve	A
Power Dissipation	PD	2	W
Derate Above 25		0.016	W/
Operating and Storage Temperature	TJ, TSTG	-55 to 150
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	T L Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

This Dual N-Channel power MOSFET RF1K49154 is manufactured using the latest manufacturing process technology. RF1K49154, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. RF1K49154 is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. These devices can be operated directly from integrated circuits.

Formerly developmental type TA49154.