RF1K49211

Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 7 A
Drain-Source Breakdown Voltage : 12 V
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 0.02 Ohms
Configuration : Single Quad Drain Dual Source
Package / Case : SOP-8


Features:

• 7A, 12V
• r _DS(ON) = 0.020W
• Temperature Compensating PSPICE^® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

			UNITS
Drain Source Voltage	VDSS	12	V
Drain Gate Voltage.	VDGR	12	V
Gate to Source Voltage	VGS	±10	V
Drain Current Continuous (Pulse Width = 1s).	ID	7	A
Pulsed	IDM	Refer to Peak Current Curve
Pulsed Avalanche Rating	EAS	(Refer to UIS Curve)
Power Dissipation	PD	12	W
Derate Above 25		0.016	W/
Operating and Storage Temperature	TJ, TSTG	-55 to 150
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Leads at 0.063in (1.6mm) from Case for 10s.	T L Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied

Description

The RF1K49211 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. RF1K49211, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. RF1K49211 was designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low-voltage bus switches. RF1K49211 achieves full-rated conduction at a gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.

Formerly developmental type TA49211.