RF1K49221

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.13 Ohms
Continuous Drain Current : 2.5 A
Package / Case : SOP-8


Features:

• 2.5A, 60V
• rDS(ON) = 0.130W
• 2kV ESD Protected
• Temperature Compensating PSPICE^® Model
• Thermal Impedance PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage	VDSS	60	V
Drain to Gate Voltage (RGS = 20kW)	VDGR	60	V
Gate to Source Voltage	VGS	±20	A
Drain Current Continuous (Pulse Width = 5s). Pulsed	ID IDM	2.5 Refer to Peak Current Curve	A
Pulsed Avalanche Rating	EAS	Refer to UIS Curve	A
Power Dissipation	PD	2	W
Derate Above 25		0.016	W/
Electrostatic Discharge Rating MIL-STD-883, Category B(2)	ESD	2	kV
Operating and Storage Temperature	TJ , TSTG	-55 to 150
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	TL Tpkg	300 260

Description

The RF1K49221 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process.RF1K49221, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. RF1K49221 is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. RF1K49221 can be operated directly from integrated circuits.

The RF1K49221 incorporates ESD protection and is designed to withstand 2kV (Human Body Model) of ESD.

Formerly developmental type TA49221.