RF1K4922396

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Configuration : Dual Dual Drain
Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 0.15 Ohms
Package / Case : SOP-8


Description

The RF1K4922396 is manufactured using an advanced MegaFET process. The features of RF1K4922396 are: (1)2.5A, 30V; (2)rDS(ON) = 0.150W; (3)Temperature Compensating PSPICE? Model; (4)Thermal Impedance PSPICE Model; (5)Peak Current vs Pulse Width Curve; (6)UIS Rating Curve; (7)Related Literature: TB334 "Guidelines for Soldering Surface Mount Components to PC Boards".

The following is about the absolute maximum ratings of RF1K4922396: (1)Drain to Source Voltage: -30 V ; (2)Drain to Gate Voltage (RGS = 20kW): -30 V ; (3)Gate to Source Voltage: ±20 A ; (4)Drain Current Continuous (Pulse Width = 5s): 2.5A; (5)Pulsed: Refer to Peak Current Curve; (6)Pulsed Avalanche Rating: Refer to UIS Curve; (7)Power Dissipation: 2 W ; (8)Derate Above 25: 0.016  W/ ; (9)Operating and Storage Temperature: -55 to 150 ; (10)Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s: 300 ; (11)Package Body for 10s, See Techbrief 334: 260 .

The electrical characteristics of the RF1K4922396 are: (1)drain to source breakdown voltage: -30V min at ID=250uA, VGS=0V; (2)gate to source threshold voltage; -1V min and -3V max; (3)zero gate voltage drain current: -1uA max; (4)gate to source leakage current: ±100nA max; (5)drain to source on resistance: 0.150 max; (6)turn-on time: 40ns max at VDD=-15V, ID=2.5A, RL=6, VGS=-10V, RGS=25; (7)turn-on delay time: 9ns typ at VDD=-15V, ID=2.5A, RL=6, VGS=-10V, RGS=25.