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RF1K49224

Features: • 3.5A, 30V (N-Channel) 2.5A, 30V (P-Channel)• r DS(ON) = 0.060W (N-Channel) r DS(ON) = 0.150W (P-Channel)• Temperature Compensating PSPICE® Model• Thermal Impedance PSPICE Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• Related L...

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SeekIC No. : 004476140 Detail

RF1K49224: Features: • 3.5A, 30V (N-Channel) 2.5A, 30V (P-Channel)• r DS(ON) = 0.060W (N-Channel) r DS(ON) = 0.150W (P-Channel)• Temperature Compensating PSPICE® Model• Thermal Impe...

RF1K49224 Data Sheet

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Part Number:
RF1K49224
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 3.5A, 30V (N-Channel)
  2.5A, 30V (P-Channel)
• r DS(ON) = 0.060W (N-Channel)
  r DS(ON) = 0.150W (P-Channel)
• Temperature Compensating PSPICE® Model
• Thermal Impedance PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

    N-CHANNEL P-CHANNEL UNITS
Drain to Source Voltage VDSS 30 30 V
Drain to Gate Voltage (RGS = 20kW) VDGR 30 30 V
Gate to Source Voltage VGS ±20 ±20 V
Drain CurrentContinuous (Pulse Width = 5s). ID 3.5 2.5  
Pulsed IDM Refer to Peak Current Curve Refer to Peak Current Curve A
Pulsed Avalanche Rating EAS Refer to UIS Curve Refer to UIS Curve  
Power Dissipation PD 2 2 W
Derate Above 25   0.016 0.016 W/
Operating and Storage Temperature TJ, TSTG -55 to 175 -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See Techbrief 334		 TL
Tpkg		 300
260		 300
260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.




Description

The RF1K49224 complementary power MOSFET is manufactured using an advanced MegaFET process. RF1K49224, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. RF1K49224 is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. RF1K49224 can be operated directly from intergrated circuits.

Formerly developmental type TA49224.




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