RF1S45N02LSM

Drain to Source Voltage .........................V_DSS
Drain to Gate Voltage ......................... V_DGR
Gate to Source Voltage ......................... V_GS
Drain Current
Continuous ................................ I_D
Pulsed Drain Current .......................... I_DM
Pulsed Avalanche Rating .........................E_AS
Power Dissipation .............................P_D
Derate Above 25oC. ........................
Operating and Storage Temperature.................T_J, T_STG
Soldering Temperature of Leads for 10s..................T_L

The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S45N02LSM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.RF1S45N02LSM were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.