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RF1S22N10SM

Features: • 22A, 100V• rDS(ON) = 0.080W• UIS SOA Rating Curve (Single Pulse)• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• 175oC Operating Temperature• Related Literature ...

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SeekIC No. : 004476141 Detail

RF1S22N10SM: Features: • 22A, 100V• rDS(ON) = 0.080W• UIS SOA Rating Curve (Single Pulse)• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Chara...

RF1S22N10SM Data Sheet

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Part Number:
RF1S22N10SM
Supply Ability:
5000

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  • 1~5000
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Total Cost: $ 0.00

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Product Details

Description



Features:

• 22A, 100V
• rDS(ON) = 0.080W
• UIS SOA Rating Curve (Single Pulse)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175oC Operating Temperature
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1) VDSS 100 V
Drain to Gate Voltage (RGS = 20kW)(Note 1) VDGR 100 V
Gate to Source Voltage VGS ±20 V
Continuous Drain Current ID 22 A
Pulsed Drain Current IDM 50 A
Maximum Power Dissipation PD 100
 W
Linear Derating Factor   0.67 W/
Operating and Storage Temperature TJ , TSTG -55 to175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See Techbrief 334		 T L
Tpkg		 300
260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.




Description

These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S22N10SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. RF1S22N10SM were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA9845.




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