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RF1S25N06SM

Features: • 25A, 60V• rDS(ON)= 0.047• Temperature Compensating PSPICE®Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175 Operating Temperature• Related Literature - TB334, Guidelines for Soldering Surface Mount Components to PC Boards Spe...

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RF1S25N06SM: Features: • 25A, 60V• rDS(ON)= 0.047• Temperature Compensating PSPICE®Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175 Operating Temperature...

RF1S25N06SM Data Sheet

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Part Number:
RF1S25N06SM
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 25A, 60V
• rDS(ON)= 0.047
• Temperature Compensating PSPICE®Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175 Operating Temperature
• Related Literature
   - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1) VDSS 60 V
Drain to Gate Voltage (RGS = 20kW)(Note 1) VDGR 60 V
Gate to Source Voltage VGS ±20 V
Continuous Drain Current(Figure 2) ID 25 A
Pulsed Drain Current IDM (Figure 5) A
Single Pulse Avalanche Rating EAS (Figure 5)
 A
Power Dissipation PD 72 W
Linear Derating Factor   0.48 W/
Operating and Storage Temperature TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See Techbrief 334		 T L
Tpkg		 300
260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.




Description

These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S25N06SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding prformance. RF1S25N06SM were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors RF1S25N06SM can be operated directly from integrated circuits.

Formerly developmental type TA09771.




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