RF1S25N06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 25 A
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.047 Ohms


Features:

• 25A, 60V
• r_DS(ON)= 0.047
• Temperature Compensating PSPICE^®Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175 Operating Temperature
• Related Literature
   - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1)	VDSS	60	V
Drain to Gate Voltage (RGS = 20kW)(Note 1)	VDGR	60	V
Gate to Source Voltage	VGS	±20	V
Continuous Drain Current(Figure 2)	ID	25	A
Pulsed Drain Current	IDM	(Figure 5)	A
Single Pulse Avalanche Rating	EAS	(Figure 5)	A
Power Dissipation	PD	72	W
Linear Derating Factor		0.48	W/
Operating and Storage Temperature	TJ, TSTG	-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	T L Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S25N06, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding prformance. RF1S25N06 were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors RF1S25N06 can be operated directly from integrated circuits.

Formerly developmental type TA09771.