Purchase RF2047, In-stock RF2047 From SeekIC.
Part Number: RF2047
Description: The RF2047 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced G...
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RF2047
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DataSheet
General Description
RF2047 General Description
The RF2047 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 input and output impedances and requires only two external DC biasing elements to operate as specified. With a goal of enhanced reliability, the extremely small Micro-X ceramic package offers significantly lower thermal resistance than similar size plastic packages.
RF2047 Maximum Ratings
|
Parameter |
Rating |
Unit |
| Supply Current |
75 |
mA |
| Input RF Power |
+15 |
dBm |
| Operating Ambient Temperature |
-40 to +85 |
|
| Storage Temperature |
-60 to +150 |
RF2047 Features
• DC to 6000MHz Operation
• Internally matched Input and Output
• 16dB Small Signal Gain
• +26dBm Output IP3
• +12dBm Output Power
• Excellent Gain Flatness
• Internally matched Input and Output
• 16dB Small Signal Gain
• +26dBm Output IP3
• +12dBm Output Power
• Excellent Gain Flatness
RF2047 Typical Application
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• High Reliability Applications
• Broadband Test Equipment
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• High Reliability Applications
• Broadband Test Equipment
RF2047
PDF/DataSheet Download
- Datasheet: RF2047
- File Size: 69960 KB
- Manufacturer: RFMD [RF Micro Devices]
- Click here to Download
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The RF2046 is a general purpose, low cost RF amplifier IC. RF2046 is manufactured on an advanced GalliumArsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and ...
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