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RF2105L

Features: • Single 2.7V to 6.5V Supply• Up to 1.2W CWOutput Power• 33dB Small Signal Gain• 48% Efficiency• Digitally Controlled Power Down Mode• Small Package Outline (0.25 x 0.25 )Application• 900 MHz ISM Band Applications• 400 MHz Industrial Radio...

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SeekIC No. : 004476182 Detail

RF2105L: Features: • Single 2.7V to 6.5V Supply• Up to 1.2W CWOutput Power• 33dB Small Signal Gain• 48% Efficiency• Digitally Controlled Power Down Mode• Small Package Out...

RF2105L Data Sheet

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Part Number:
RF2105L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

• Single 2.7V to 6.5V Supply
• Up to 1.2W CWOutput Power
• 33dB Small Signal Gain
• 48% Efficiency
• Digitally Controlled Power Down Mode
• Small Package Outline (0.25" x 0.25")


Application

• 900 MHz ISM Band Applications
• 400 MHz Industrial Radios
• Digital Communication Systems
• Driver Stage for Higher Power Applications
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment


Specifications

Parameter
Rating
Unit
Supply Voltage(VCC)
-0.5 to +6.0
VDC
Control Voltage(VPD)
-0.5 to +3.0
VDC
DC Supply Current
700
mA
Input RF Power
+12
dBm
Output Load
20:1
  
Operating Case Temperature
-40 to +100
Operating Ambient Temperature
-40 to +85
Storage Temperature
-40 to +150



Description

The RF2105L is a high power, high efficiency linear amplifier IC. RF2105L is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM applications requiring linear amplification. RF2105L is packaged in a 16-lead ceramic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line.




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