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RF2108

Features: • Single 4.2V to 6.0V Supply• 28dBm Linear Output Power• 29dB Gain With Analog Gain Control• 45% Linear Efficiency• On-board Power Down Mode• 800MHz to 950MHz OperationApplication• 4.8V AMPS Cellular Handsets• 4.8V CDMA/AMPS Cellular Handse...

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SeekIC No. : 004476183 Detail

RF2108: Features: • Single 4.2V to 6.0V Supply• 28dBm Linear Output Power• 29dB Gain With Analog Gain Control• 45% Linear Efficiency• On-board Power Down Mode• 800MHz to ...

RF2108 Data Sheet

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Part Number:
RF2108
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• Single 4.2V to 6.0V Supply
• 28dBm Linear Output Power
• 29dB Gain With Analog Gain Control
• 45% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 950MHz Operation


Application

• 4.8V AMPS Cellular Handsets
• 4.8V CDMA/AMPS Cellular Handsets
• Driver Amplifier in Cellular Base Stations
• Portable Battery Powered Equipment


Specifications

Parameter Rating Unit
Supply Voltage (No RF) -0.5 to +8.0 VDC
Supply Voltage (POUT<31dBm) -0.5 to +6.0 VDC
Power Control Voltage (VPC) -0.5 to +6.0 or VCC V
DC Supply Current 800 mA
Input RF Power +12 dBm
Output Load VSWR 10:1  
Storage Temperature -40 to +150 °C
Junction Temperature 200 °C

 




Description

The RF2108 is a high power, high efficiency linear amplifier IC. RF2108 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 950MHz band. RF2108  is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics.




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