RF2113

The RF2113 is a kind of medium to high power linear amplifier IC. RF2113 is fabricated with an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the dual linear RF amplifier in UHF radio transmitters operating between 1 MHz and 1 GHz. It may also be used as a driver amplifier in higher power applications. RF2113 is available in a 8-lead plastic SOIC package with a backside ground. The device can be used in 3 cell battery applications. The unit has a total gain of 31 dB, depending on the output matching network.

There are some features of RF2113 as follows: (1)1 MHz to 1000 MHz operation; (2)over 1W CW output power; (3)31 dB small signal gain; (4)single 2.7 to 7.5 V supply; (5)42% efficiency; (6)digitally controlled power down mode. The typical applications include: (1)digital communication systems; (2)spread spectrum communication systems; (3)driver for higher power linear applications; (4)portable battery powered equipment; (5)commercial and consumer systems; (6)base station equipment.

The following of RF2113 is about the absolute maximum ratings: (1)supply voltage, VCC: +7.5 Vdc; (2)PA DC input current: 250 mA; (3)power down voltage, Vpd: +5 V; (4)input RF power: +6 dBm; (5)case temperature: +100. Then is about the specifications at 25 and 6 V: (1)frequency range: 1 to 1000 MHz; (2)input VSWR (with external matching network): <3:1; (4)second harmonic (without second harmonic trap): -24 dBc typ; (5)third harmonic: -30 dBc typ; (6)output noise power: <-125 dBm/Hz typ; (7)Zin (with external matching network): 50 typ; (8)power supply voltage: 2.7 to 6.5 V; (9)power supply idle current (VCC=+6.3 Vdc): 80 mA typ.