RF2115L

Features: • Single 5V to 6.5V Supply• Up to 1.0W CWOutput Power• 33dB Small Signal Gain• 48% Efficiency• Digitally Controlled Output Power• Small Package Outline (0.25 x 0.25 )Application• Analog Communication Systems• Analog Cellular Systems (AMPS ...

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RF2115L Picture
SeekIC No. : 004476187 Detail

RF2115L: Features: • Single 5V to 6.5V Supply• Up to 1.0W CWOutput Power• 33dB Small Signal Gain• 48% Efficiency• Digitally Controlled Output Power• Small Package Outline ...

floor Price/Ceiling Price

Part Number:
RF2115L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• Single 5V to 6.5V Supply
• Up to 1.0W CWOutput Power
• 33dB Small Signal Gain
• 48% Efficiency
• Digitally Controlled Output Power
• Small Package Outline (0.25" x 0.25")



Application

• Analog Communication Systems
• Analog Cellular Systems (AMPS & TACS)
• 900MHz Spread-Spectrum Systems
• 400MHz Industrial Radios
• Driver Stage for Higher Power Applications
• Portable Battery-Powered Equipment



Specifications

Parameter
Rating
Unit
Supply Voltage(VCC)
-0.5 to +6.0
VDC
Power Down Voltage(VPD)
-0.5 to +5.0
V
Control Voltage(G10, G20)
-0.5 to +6.0
V
DC Supply Current
700
mA
Input RF Power
+12
dBm
Output Load
20:1
 
Operating Case Temperature
-40 to +100
Operating Ambient Temperature
-40 to +85
Storage Temperature
-40 to +150



Description

The RF2115L is a high power amplifier IC. RF2115L ismanufactured on an advanced Gallium Arsenide HeterojunctionBipolar Transistor (HBT) process, and has beendesigned for use as the final RF amplifier in analog cellularphone transmitters or ISM applications operating at915MHz. RF2115L is packaged in a 16-lead ceramicquad leadless chip carrier with a backside ground. Thedevice is self-contained with the exception of the outputmatching network and power supply feed line. A two-bit igital control provides 4 levels of power control, in 10dB  teps.




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