Features: • Single 5V to 6.5V Supply• Up to 1.0W CWOutput Power• 33dB Small Signal Gain• 48% Efficiency• Digitally Controlled Output Power• Small Package Outline (0.25 x 0.25 )Application• Analog Communication Systems• Analog Cellular Systems (AMPS ...
RF2115L: Features: • Single 5V to 6.5V Supply• Up to 1.0W CWOutput Power• 33dB Small Signal Gain• 48% Efficiency• Digitally Controlled Output Power• Small Package Outline ...
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|
Parameter |
Rating |
Unit |
| Supply Voltage(VCC) |
-0.5 to +6.0 |
VDC |
| Power Down Voltage(VPD) |
-0.5 to +5.0 |
V |
| Control Voltage(G10, G20) |
-0.5 to +6.0 |
V |
| DC Supply Current |
700 |
mA |
| Input RF Power |
+12 |
dBm |
| Output Load |
20:1 |
|
| Operating Case Temperature |
-40 to +100 |
|
| Operating Ambient Temperature |
-40 to +85 |
|
| Storage Temperature |
-40 to +150 |
The RF2115L is a high power amplifier IC. RF2115L ismanufactured on an advanced Gallium Arsenide HeterojunctionBipolar Transistor (HBT) process, and has beendesigned for use as the final RF amplifier in analog cellularphone transmitters or ISM applications operating at915MHz. RF2115L is packaged in a 16-lead ceramicquad leadless chip carrier with a backside ground. Thedevice is self-contained with the exception of the outputmatching network and power supply feed line. A two-bit igital control provides 4 levels of power control, in 10dB teps.