Features: • Single 3V to 5.5V Supply• Up to 2W CW Output Power• 33dB Small Signal Gain• >50% Efficiency• 400MHz to 500MHz OperationApplication• 3.6V Analog Handsets• Analog Communication Systems• 400MHz Industrial Radios• Portable Battery Po...
RF2117: Features: • Single 3V to 5.5V Supply• Up to 2W CW Output Power• 33dB Small Signal Gain• >50% Efficiency• 400MHz to 500MHz OperationApplication• 3.6V Analog Han...
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|
Parameter |
Rating |
Unit |
| Supply Voltage(VCC) |
-0.5 to +6.0 |
VDC |
| Control Voltage(VPD) |
-0.5 to +3.0 |
V |
| DC Supply Current |
1300 |
mA |
| Input RF Power |
+10 |
dBm |
| Output Load |
7:1 |
|
| Operating Case Temperature |
-40 to +100 |
|
| Operating Ambient Temperature |
-40 to +85 |
|
| Storage Temperature |
-55 to +150 |
The RF2117 is a high power amplifier IC. RF2117 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters between 400MHz and 500MHz or ISM applications operating at 433MHz. The device is packaged in a low cost 16-lead plastic package with a met al backside. RF2117 is self-contained with the exception of the output matching network and power supply feed line.