Features: • Single 2V to 5V Supply• 30dBm Output Power at 2.5V• 30dB Small Signal Gain• 53% Efficiency• On-board Power Down Mode• 800MHz to 960MHz OperationApplication• Two-Way Pagers• 915MHz ISM Band Equipment• Spread-Spectrum Systems• 3...
RF2119: Features: • Single 2V to 5V Supply• 30dBm Output Power at 2.5V• 30dB Small Signal Gain• 53% Efficiency• On-board Power Down Mode• 800MHz to 960MHz OperationApplic...
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|
Parameter |
Rating |
Unit |
| Supply Voltage(RF off) |
+8.0 |
VDC |
| Supply Voltage |
+5.2 |
VDC |
| Control Voltage(VPC) |
+3.0 |
VDC |
| Input RF Power |
+12 |
dBm |
| CW Dissipated Power |
1.8 |
W |
| Peak Dissipated Power |
2.5 |
W |
| Operating Ambient Temperature |
-30 to +110 |
|
| Storage Temperature |
-30 to +150 |
The RF2119 is a high-power, high-efficiency amplifier IC targeting 2V to 4V handheld systems. RF2119 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 960MHz band. RF2119 is well suited for either CW or pulsed applications. At 3V, the RF2119 can deliver 29.5dBm of linear output power. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The package is a PSSOP-16 with backside ground.