Features: • Single 2.7V to 7.5V Supply• 1W Output Power• 14dBGain• 45% Efficiency• Power Down Mode• 1500MHz to 2200MHz OperationApplication• PCS Communication Systems• Digital Communication Systems• DECT Cordless Applications• Commercial ...
RF2125P: Features: • Single 2.7V to 7.5V Supply• 1W Output Power• 14dBGain• 45% Efficiency• Power Down Mode• 1500MHz to 2200MHz OperationApplication• PCS Communicati...
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| Parameter |
Rating |
Unit |
| Supply Voltage (VCC) |
-0.5 to +7.5 |
VDC |
| Power Control Voltage (VPC) |
-0.5to+5V |
V |
| DC Supply Current |
450 |
mA |
| Input RF Power |
+20 |
dBm |
| Output Load VSWR |
20:1 |
|
| Operating Ambient Temperature |
-40 to +85 |
°C |
| Storage Temperature |
-40 to +100 |
°C |
The RF2125P is a high power, high efficiency linear amplifierIC. RF2125P ismanufacturedonanadvanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base sta-tions requiring linear amplification operating between 1500MHz and 2200MHz. RF2125P will also function as a high efficiency amplifier for constant envelope applications such as DECT. The device is packaged in an 8-lead plas-tic package with a backside ground. RF2125P is self-contained with the exception of the output matching net-work and power supply feed line. It produces a typical output power level of 1W.