RF2125P

Features: • Single 2.7V to 7.5V Supply• 1W Output Power• 14dBGain• 45% Efficiency• Power Down Mode• 1500MHz to 2200MHz OperationApplication• PCS Communication Systems• Digital Communication Systems• DECT Cordless Applications• Commercial ...

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RF2125P Picture
SeekIC No. : 004476191 Detail

RF2125P: Features: • Single 2.7V to 7.5V Supply• 1W Output Power• 14dBGain• 45% Efficiency• Power Down Mode• 1500MHz to 2200MHz OperationApplication• PCS Communicati...

floor Price/Ceiling Price

Part Number:
RF2125P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

Rating

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Upload time: 2025/12/27

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Product Details

Description



Features:

• Single 2.7V to 7.5V Supply
• 1W Output Power
• 14dBGain
• 45% Efficiency
• Power Down Mode
• 1500MHz to 2200MHz Operation



Application

• PCS Communication Systems
• Digital Communication Systems
• DECT Cordless Applications
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment



Specifications

Parameter
Rating
Unit
Supply Voltage (VCC)
-0.5 to +7.5
VDC
Power Control Voltage (VPC)
-0.5to+5V
V
DC Supply Current
450
mA
Input RF Power
+20
dBm
Output Load VSWR
20:1
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +100
°C



Description

The RF2125P is a high power, high efficiency linear amplifierIC. RF2125P ismanufacturedonanadvanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base sta-tions requiring linear amplification operating between 1500MHz and 2200MHz. RF2125P will also function as a high efficiency amplifier for constant envelope applications such as DECT. The device is packaged in an 8-lead plas-tic package with a backside ground. RF2125P is self-contained with the exception of the output matching net-work and power supply feed line. It produces a typical output power level of 1W.




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