Features: • Single 3.3V Power Supply• +26dBm Saturated Output Power• 27dB Small Signal Gain• High Power Added Efficiency• Power Down Mode• 1800MHz to 2500MHz Frequency RangeApplication• 2.5GHz ISM Band Applications• PCS Communication Systems• W...
RF2129: Features: • Single 3.3V Power Supply• +26dBm Saturated Output Power• 27dB Small Signal Gain• High Power Added Efficiency• Power Down Mode• 1800MHz to 2500MHz Freq...
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|
Parameter |
Rating |
Unit |
|
Supply Voltage (VCC) |
-0.5 to +6.0 |
VDC |
|
Power Down Voltage (VPD) |
-0.5 to+3.3 |
V |
|
DC Supply Current |
350 |
mA |
|
Input RF Power |
+12 |
dBm |
|
Operating Ambient Temperature |
-40 to +85 |
°C |
|
Storage Temperature |
-40 to +150 |
°C |
|
Moisture sensitivity |
JEDEC Level 3 |
|
The RF2129 is a linear, medium power, high efficiencyamplifier IC designed specifically for low voltage opera-tion. RF2129 is manufactured on an advanced GalliumArsenide Heterojunction Bipolar Transistor (HBT) pro-cess, and has been designed for use as the final RFamplifier in 2.5GHz spread spectrum transmitters. RF2129 is packaged in an 8-lead plastic package with abackside ground and is self-contained with the exceptionof the output matching network and power supply feedline.