Features: • Single 4.0V to 7.0V Supply• 1.2W Output Power• 25dB Gain With Analog Gain Control• 64% Efficiency• Digitally Controlled Power Down Mode• 800MHz to 950MHz OperationApplication• AMPS/ETACS Cellular Handsets• CDPD Portable Data Cards• ...
RF2131: Features: • Single 4.0V to 7.0V Supply• 1.2W Output Power• 25dB Gain With Analog Gain Control• 64% Efficiency• Digitally Controlled Power Down Mode• 800MHz to 950...
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|
Parameter |
Rating |
Unit |
|
Supply Voltage (VCC) |
--0.5 to +8.5 |
VDC |
|
Power Down Voltage (VPD) |
-0.5 to+4.5 |
V |
|
DC Supply Current |
570 |
mA |
|
Input RF Power |
+12 |
dBm |
|
Output Load VSWR |
20:1 |
|
|
Operating Case Temperature |
-40 to +100 |
°C |
|
Operating Ambient Temperature |
-40 to +85 |
°C |
|
Storage Temperature |
-40 to +150 |
°C |
The RF2131 is a high-power, high-efficiency amplifier IC.
RF2131 is manufactured on an advanced Gallium Ars-enide Heterojunction Bipolar Transistor (HBT) process,and RF2131 has been designed for use as the final RF amplifier inAMPS and ETACS handheld equipment, spread spec-trum systems, CDPD, and other applications in the800MHz to 950MHz band. On-board power control pro-vides over 30dB of control range with an analog voltageinput, and provides power down with a logic "low" forstandby operation. Although it is intended for class Coperation, linear class AB operation can be achieved byraising the bias level. RF2131 is self-contained with50Ω input and the output can be easily matched to obtainoptimum power and efficiency characteristics.