Application• 4.8V AMPS Cellular Handsets• 4.8V CDMA/AMPS Handsets• 4.8V JCDMA/TACS Handsets• Driver Amplifier in Cellular Base Stations• Portable Battery-Powered EquipmentPinoutSpecifications Parameter Rating Unit Supply Voltage (No RF) -0.5 to +8.0 ...
RF2137: Application• 4.8V AMPS Cellular Handsets• 4.8V CDMA/AMPS Handsets• 4.8V JCDMA/TACS Handsets• Driver Amplifier in Cellular Base Stations• Portable Battery-Powered Equipm...
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| Parameter |
Rating |
Unit |
| Supply Voltage (No RF) |
-0.5 to +8.0 |
VDC |
| Supply Voltage (POUT<31dBm) |
-0.5 to +6.0 |
VDC |
| Power Control Voltage (VPC) |
-0.5 to +6.0 or VCC |
V |
| DC Supply Current |
800 |
mA |
| Input RF Power |
+12 |
dBm |
| Output Load VSWR |
10:1 |
|
| Ambient Operating Temperature |
-30 to +90 |
°C |
| Storage Temperature |
-40 to +150 |
°C |
The RF2137 is a high power, high efficiency linear amplifier IC. RF2137 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics of RF2137 at all recommended supply voltages.