Features: • Single 2.7V to 4.8V Supply Voltage• +36dBm Output Power at 3.5V• 32dB Gain with Analog Gain Control• 58% Efficiency• 800MHz to 950MHz Operation• Supports GSM and E-GSMApplication• 3V GSM Cellular Handsets• 3V Dual-Band/Triple-Band Handset...
RF2138: Features: • Single 2.7V to 4.8V Supply Voltage• +36dBm Output Power at 3.5V• 32dB Gain with Analog Gain Control• 58% Efficiency• 800MHz to 950MHz Operation• Suppo...
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|
Parameter |
Rating |
Unit |
| Supply Voltage |
-0.5 to +6.0 |
VDC |
| Power Control Voltage (VAPC1,2) |
-0.5 to +3.0 |
V |
| DC Supply Current |
2400 |
mA |
| Input RF Power |
+13 |
dBm |
| Duty Cycle at Max Power |
50 |
% |
| Output Load VSWR |
10:1 |
|
| Operating Case Temperature |
-40 to +85 |
|
| Storage Temperature |
-55 to +150 |
RF Micro Devices believes the furnished information is correct and accurate at the time of
this printing. However, RF Micro Devices reserves the right to make changes to its products
without notice. RF Micro Devices does not assume responsibility for the use of the described
product(s).
The RF2138 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications. RF2138 is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand held-digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic "low" for standby operation. RF2138 is self-contained with 50Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF2138 can be used together with the RF2140 for dual-band operation. RF2138 is packaged in an ultra-small ceramic package, minimizing the required board space.