Features: • Single 3V Supply• 28dBm Linear Output Power• 30dB Linear Gain• 35% Linear Efficiency• On-board Power Down Mode• 800MHz to 960MHz OperationApplication• 3V CDMA/AMPS Cellular Handsets• 3V JCDMA/TACS Cellular Handsets• 3V TDMA/AMPS Cel...
RF2152: Features: • Single 3V Supply• 28dBm Linear Output Power• 30dB Linear Gain• 35% Linear Efficiency• On-board Power Down Mode• 800MHz to 960MHz OperationApplication&...
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|
Parameter |
Rating |
Unit |
| Supply Voltage(RF off) |
+8.0 |
VDC |
| Supply Voltage (POUT31dBm) |
+5.2 |
VDC |
| DC Supply Current |
1.0 |
A |
| Mode Voltage (VMODE) |
+3.0 |
VDC |
| Control Voltage(VPD) |
+3.0 |
VDC |
| DC Supply Current |
500 |
mA |
| Input RF Power |
+15 |
dBm |
| Operating Ambient Temperature |
-30 to +90 |
|
| Storage Temperature |
-40 to +150 |
|
| Moisture Sensitivity |
JEDEC LEVEL 5 |
The RF2152 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2152 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and RF2152 has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 950MHz band. RF2152 is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The package is a PSSOP-16 with backside ground.