Features: • Single 3V Supply• 29dBm Linear Output Power• 29dB Linear Gain• 35% Linear Efficiency• On-board Power Down Mode• 800MHz to 960MHz OperationApplication• 3V CDMA/AMPS Cellular Handsets• 3V JCDMA/TACS Cellular Handsets• 3V TDMA/AMPS Cel...
RF2162: Features: • Single 3V Supply• 29dBm Linear Output Power• 29dB Linear Gain• 35% Linear Efficiency• On-board Power Down Mode• 800MHz to 960MHz OperationApplication&...
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|
Parameter |
Rating |
Unit |
| Supply Voltage(RF off) |
+8.0 |
VDC |
| Supply Voltage (RF Applied) |
+4.5 |
VDC |
| Mode Voltage (VMODE) |
+3.0 |
VDC |
| Control Voltage (VREG) |
+3.0 |
VDC |
| Input RF Power (Avg.) |
+12 |
dBm |
| Operating Ambient Temperature |
-30 to +110 |
|
| Storage Temperature |
-30 to +120 |
|
| Moisture Sensitivity | Modified JEDEC Level 2 |
| Frequency (MHz) | 800 to 960 |
| Gain (dB) | 29 at 836 |
| Vcc (V) | 3.4 |
| Package/Size (Dim in mm) | QFN, 4x4, 16-pin |
The RF2162 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2162 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode V CDMA/AMPS hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 960MHz band. The RF2162 has an analog bias control voltage to maximize efficiency. RF2162 is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The device is packaged in a compact 4mmx4mm, 16-pin, leadless chip carrier.