RF2173

Series: -
P1dB: -
Gain: 30dB
Noise Figure: -
Manufacturer: RFMD
Test Frequency: 915MHz
Package / Case: 16-VQFN Exposed Pad
Frequency: 800MHz ~ 950MHz
Voltage - Supply: 2.7 V ~ 4.8 V
Packaging: Tray
RF Type: GSM
Current - Supply: 2A


Features:

• Single 2.7V to 4.8V Supply Voltage
• +36dBm Output Power at 3.5V
• 32dB Gain with Analog Gain Control
• 56% Efficiency
• 800MHz to 950MHz Operation
• Supports GSM and E-GSM




Application

• 3V GSM Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
• GPRS Compatible
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment




Specifications

Parameter	Rating	Unit
Supply Voltage	-0.5 to +6.0	VDC
Control Voltage(VAPC1,2)	-0.5 to +3.3	V
DC Supply Current	1500	mA
Input RF Power	+13	dBm
Duty Cycle at Max Power	50	%
Output Load VSWR	10:1
Operating Ambient Temperature	-40 to +85
Storage Temperature	-55 to +150

Frequency (MHz)

800 to 950

Gain (dB)

37 at at 915

Vcc (V)

2.7 to 4.8

Package/Size (Dim in mm)

QFN-16, 4x4mm

Description

The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications.RF2173 is manufactured on an advanced GaAs HBT process, and RF2173 has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic "low" for standby operation. RF2173 is self-contained with 50 input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF2173 can be used together with the RF2174 for dual-band operation. The device is packaged in an ultra-small plastic package, minimizing the required board space.