Features: • Single 3.3V Power Supply• +25dBm Saturated Output Power• 20dB Small Signal Gain• High Power Added Efficiency• Power Down Mode• 1800MHz to 2500MHz Frequency RangeApplication• 2.5GHz ISM Band Applications• PCS Communication Systems• W...
RF2189: Features: • Single 3.3V Power Supply• +25dBm Saturated Output Power• 20dB Small Signal Gain• High Power Added Efficiency• Power Down Mode• 1800MHz to 2500MHz Freq...
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|
Parameter |
Rating |
Unit |
| Supply Voltage |
-0.5 to +6.0 |
VDC |
| Control Voltage(VPC) |
-0.5 to +3.3 |
V |
| DC Supply Current |
350 |
mA |
| Input RF Power |
+12 |
dBm |
| Operating Ambient Temperature |
-40 to +85 |
|
| Storage Temperature |
-40 to +150 |
|
| Moisture sensitivity | JEDEC Level 3 |
The RF2189 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. RF2189 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum transmitters. RF2189 is provided in a 16-pin leadless chip carrier with a backside ground and is self-contained with the exception of the output matching network and power supply feed line.