Features: • DC to 6000MHz Operation• Internally matched Input and Output• 12dB Small Signal Gain• +33dBm Output IP3• +17dBm Output Power• Good Gain FlatnessApplication• Broadband, Low Noise Gain Blocks• IF or RF Buffer Amplifiers• Driver Stage ...
RF2335: Features: • DC to 6000MHz Operation• Internally matched Input and Output• 12dB Small Signal Gain• +33dBm Output IP3• +17dBm Output Power• Good Gain FlatnessApplic...
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| Parameter |
Rating |
Unit |
| Supply Current Input RF Power Operating Ambient Temperature Storage Temperature |
120 +02 -40 to +70 -60 to +150 |
mA dBm °C °C |
The RF2335 is a general purpose, low-cost RF amplifier IC. RF2335 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified. The RF2335 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling compact designs which conserve board space.