RF2335

Features: • DC to 6000MHz Operation• Internally matched Input and Output• 12dB Small Signal Gain• +33dBm Output IP3• +17dBm Output Power• Good Gain FlatnessApplication• Broadband, Low Noise Gain Blocks• IF or RF Buffer Amplifiers• Driver Stage ...

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RF2335 Picture
SeekIC No. : 004476238 Detail

RF2335: Features: • DC to 6000MHz Operation• Internally matched Input and Output• 12dB Small Signal Gain• +33dBm Output IP3• +17dBm Output Power• Good Gain FlatnessApplic...

floor Price/Ceiling Price

Part Number:
RF2335
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• DC to 6000MHz Operation
• Internally matched Input and Output
• 12dB Small Signal Gain
• +33dBm Output IP3
• +17dBm Output Power
• Good Gain Flatness



Application

• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Broadband Test Equipment



Pinout

  Connection Diagram


Specifications

Parameter
Rating
Unit
Supply Current

Input RF Power

Operating Ambient Temperature

Storage Temperature
120

+02

-40 to +70

-60 to +150
mA

dBm

°C

°C



Description

The RF2335 is a general purpose, low-cost RF amplifier IC. RF2335 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified. The RF2335 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling compact designs which conserve board space.




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