Features: • DC to 3000MHz Operation• Internally matched Input and Output• 20dB Small Signal Gain• 3.8dB Noise Figure• 10mW Linear Output Power• Single Positive Power SupplyApplication• Broadband, Low Noise Gain Blocks• IF or RF Buffer Amplifiers̶...
RF2336: Features: • DC to 3000MHz Operation• Internally matched Input and Output• 20dB Small Signal Gain• 3.8dB Noise Figure• 10mW Linear Output Power• Single Positive Po...
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| Parameter |
Rating |
Unit |
| Supply Current Input RF Power Operating Ambient Temperature Storage Temperature |
75 +15 -40 to +85 -60 to +150 |
mA dBm °C °C |
The RF2336 is a general purpose, low-cost RF amplifier IC. RF2336 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified. The RF2336 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling compact designs which conserve board space.