Features: • DC to >6000MHz Operation• Internally Matched Input and Output• 22dB Small Signal Gain• +2.0dB Noise Figure• +11dBm Output P1dBApplication• Basestation Applications• Broadband, Low-Noise Gain Blocks• IF or RF Buffer Amplifiers• Dr...
RF3376: Features: • DC to >6000MHz Operation• Internally Matched Input and Output• 22dB Small Signal Gain• +2.0dB Noise Figure• +11dBm Output P1dBApplication• Basestat...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Frequency (MHz) | DC to 6000 |
| Gain (dB) | 19.8 at 2000 |
| NF (dB) | 2.0 |
| OP1dB (dBm) | 11.5 |
| OIP3 (dBm) | +24 |
| Vd (V) | 3.4 |
| Vcc (V) | 4.2 |
| Icc (mA) | 35 |
| Package/Size (Dim in mm) | SOT-89 |
|
Parameter |
Rating | Unit |
| Input RF Power | +3 | dBm |
| Operating Ambient Temperature | -40 to +85 | °C |
| Storage Temperature | -60 to +150 | °C |
| ICC | 40 | mA |
The RF3376 is a general purpose, low-cost RF amplifier IC. The device RF3376 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device RF3376 is self-contained with 50 input and output impedances and requires only two external DC-biasing elements to operate as specified.