Features: • 14A, 60V• rDS(ON) = 0.100W• Temperature Compensating PSPICE® Model• Can be Driven Directly from CMOS, NMOS, and TTL Circuits• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175oC Operating Temperature• Related Literature- TB334 ...
RFD14N06LSM: Features: • 14A, 60V• rDS(ON) = 0.100W• Temperature Compensating PSPICE® Model• Can be Driven Directly from CMOS, NMOS, and TTL Circuits• Peak Current vs Pulse Widt...
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| RFD14N06L, RFD14N06LSM, RFP14N06LS |
UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 60 | V |
| Continuous Drain Current ID | -15 | A |
| Pulsed Drain Current (Note 3) IDM | 120 | A |
| Gate to Source Voltage VGS | ±20 | V |
| EAS Power Dissipation PD 25oC |
48 | W |
| Linear Derating Factor | 0.533 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 . Tpkg | 260 | o C |