MOSFET TO-251
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
| Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 16 A |
| Resistance Drain-Source RDS (on) : | 0.025 Ohms | Configuration : | Single |
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole |
| Package / Case : | TO-251 |
| RFD16N03L, RFD16N03LSM | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 30 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 30 | V |
| Continuous Drain Current ID | 16 | A |
| Pulsed Drain Current (Note 3) IDM | 45 | A |
| Gate to Source Voltage VGS | ±10 | V |
| EAS Power Dissipation PD 25oC |
48 | W |
| Pulsed Avalanche Rating EAS | Figures 6, 16, 17 | |
| Derate above 25oC | 0.48 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 . Tpkg | 260 | o C |