RFD16N06SM

Features:

• 16A, 60V
• rDS(ON) = 0.047W
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"


Specifications

	RFD16N06, RFD16N06SM	UNITS
Drain to Source Voltage (Note 1) VDSS	60	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	60	V
Continuous (Figure 2)ID	16	A
Pulsed Drain Current (Note 3) IDM	Refer to UIS Curve	A
Gate to Source Voltage VGS	±20	V
Pulsed Drain Current IDM	Refer to Peak Current Curve	W
Pulsed Avalanche Rating EAS	Figure 6
Derate above 25oC	0.2	A
Pulsed Avalanche Rating UIS	Refer to UIS SOA
Operating and Storage Temperature .TJ, TSTG	-55 to 75	o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL	300	o C
Package Body for 10s, See Techbrief 334 Tpkg	260	o C

Description

These N-Channel power MOSFETs RFD16N06SM are manufactured using the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.