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RFD20N03SM

Features: • 20A, 30V• rDS(ON) = 0.025W• Temperature Compensating PSPICE® Model• Thermal Impedance SPICE Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175oC Operating Temperature• Related Literature- TB334 Guidelines for Soldering S...

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SeekIC No. : 004476512 Detail

RFD20N03SM: Features: • 20A, 30V• rDS(ON) = 0.025W• Temperature Compensating PSPICE® Model• Thermal Impedance SPICE Model• Peak Current vs Pulse Width Curve• UIS Rating C...

RFD20N03SM Data Sheet

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Part Number:
RFD20N03SM
Supply Ability:
5000

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Product Details

Description



Features:

• 20A, 30V
• rDS(ON) = 0.025W
• Temperature Compensating PSPICE® Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"


Specifications

    UNITS
Drain to Source Voltage (Note 1) VDSS 30 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 30 V
Continuous (Figure 2)ID 20 A
Pulsed Drain Current (Note 3) IDM Refer to UIS Curve A
Gate to Source Voltage VGS +10, -8 V

Pulsed Drain Current IDM
Refer to Peak Current Curve		 W
Pulsed Avalanche Rating EAS Figure 6
Derate above 25oC 0.27 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 o C



Description

The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors RFD20N03 and RFD20N03SM can be operated directly from integrated circuits. Formerly developmental type TA49235.




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