Packaging
:
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Transistor Polarity
: P-Channel
Drain-Source Breakdown Voltage
: - 50 V
Continuous Drain Current
: 8 A
Resistance Drain-Source RDS (on)
: 0.3 Ohms
Package / Case
: TO-251AA
Features: • 8A, 50V
• rDS(ON) = 0.300W
• UIS SOA Rating Curve
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"Specifications
| |
RFD8P05,
RFD8P05SM, RFP8P05 |
UNITS |
| Drain to Source Voltage (Note 1) VDSS |
-50 |
V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR |
-50 |
V |
| Continuous Drain Current ID15 |
-8 |
A |
| Pulsed Drain Current (Note 3) IDM |
Refer to UIS Curve |
A |
| Gate to Source Voltage VGS |
±20 |
V |
Power Dissipation PD
25oC |
80 |
W |
| Pulsed Avalanche Rating EAS |
Figures 6, 16, 17 |
| Derate above 25oC |
0.27 |
A |
| Pulsed Avalanche Rating UIS |
Refer to UIS SOA |
|
| Operating and Storage Temperature .TJ, TSTG |
-55 to 75 |
o C |
| Maximum Temperature for Soldering |
Maximum Lead Temperature for Soldering TL
(0.063in (1.6mm) from case for 10s) |
300 |
o C |
DescriptionThese N-Channel power MOSFETs RFD8P05 are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49046
Parameters: | Technical/Catalog Information | RFD8P05 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 8A, 10V |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 48W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 80nC @ 20V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | RFD8P05
RFD8P05
|
RFD8P05 Data Sheet
