RFD8P05SM

MOSFET TO-252AA P-Ch Power

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SeekIC No. : 00164818 Detail

RFD8P05SM: MOSFET TO-252AA P-Ch Power

floor Price/Ceiling Price

Part Number:
RFD8P05SM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/18

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 50 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.3 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252    

Description

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Package / Case : TO-252
Drain-Source Breakdown Voltage : - 50 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.3 Ohms


Parameters:

Technical/Catalog InformationRFD8P05SM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs300 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds -
Power - Max48W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 20V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names RFD8P05SM
RFD8P05SM



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