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MFG:FAICHILD  Package Cooled:TO-3P  D/C:08+  

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Part Number: RFG40N10

 

MFG: FAICHILD

Package Cooled: TO-3P

D/C: 08+

Description: These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea...


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RFG40N10 General Description


These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding perormance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA9846

RFG40N10 Maximum Ratings

      UNITS
Drain to Source Breakdown Voltage (Note 1) VDSS 100 V
Drain to Gate Voltage (RGS = 20kW) (Note 1) . VDGR 100 V
Gate to Source Voltage VGS ±20 V
Drain Current Continuous (Figure 2). ID 40 A
Pulsed Drain Current (Note 2) IDM 100 A
Pulse Avalanche Rating EAS Figures 4, 12, 13  
Power Dissipation PD 160 W
Derate Above 25   1.07 W/
Operating and Storage Temperature TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief 334
T L
Tpkg
300
260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


RFG40N10 Features

• 40A, 100V
• rDS(ON) = 0.040
• UIS Rating Curve
• SOA is Power Dissipation Limited
• 175 Operating Temperature
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

RFG40N10 datasheet

RFG40N10
PDF/DataSheet Download

  • Datasheet: RFG40N10
  • File Size: 52273 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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