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RFG45N06

Features: • 45A, 60V• rDS(ON) = 0.028W• Temperature Compensating PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175oC Operating Temperature• Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards...

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SeekIC No. : 004476534 Detail

RFG45N06: Features: • 45A, 60V• rDS(ON) = 0.028W• Temperature Compensating PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175oC Operating Temperatu...

RFG45N06 Data Sheet

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Part Number:
RFG45N06
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 45A, 60V
• rDS(ON) = 0.028W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

      UNITS
Drain to Source Voltage (Note 1) VDSS 60 V
Drain to Gate Voltage (RGS = 20kW)(Note 1) VDGR 60 V
Continuous Drain Current ID 45 A
Pulsed Drain Current (Note 3) IDM Refer to Peak Current Curve  
Gate to Source Voltage VGS ±20 V
Pulse Avalanche Rating EAS Refer to UIS Curve  
Power Dissipation PD 131 W
Linear Derating Factor   0.877 W/
Operating and Storage Temperature TJ , TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See Techbrief 334		 T L
Tpkg		 300
260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.




Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFG45N06. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs RFG45N06 are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA49028.




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