RFG70N06

MOSFET TO-247 N-Ch Power

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RFG70N06 Picture
SeekIC No. : 00163758 Detail

RFG70N06: MOSFET TO-247 N-Ch Power

floor Price/Ceiling Price

Part Number:
RFG70N06
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.014 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-247
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.014 Ohms
Continuous Drain Current : 70 A


Features:

• 70A, 60V
• r DS(on) = 0.014W
• Temperature Compensated PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175 Operating Temperature
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"



Specifications

      UNITS
Drain-Source Voltage (Note 1) VDSS 60 V
Drain-Gate Voltage.(RGS = 20kW) (Note 1) VDGR 60 V
Continuous Drain Current ID 70 A
Pulsed Drain Current (Note 3) IDM Refer to Peak Current Curve  
Gate to Source Voltage VGS ±20 A
Single Pulse Avalanche Rating EAS (Refer to UIS Curve)  
Power Dissipation PD 150 W
Linear Derating Factor   1.0 W/
Operating and Storage Temperature TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Leads at 0.063in (1.6mm) from Case for 10s.
T L
Tpkg
300
260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.





Description

These are N-Channel power MOSFETs RFG70N06 manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. RFG70N06 were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors RFG70N06 can be operated directly from integrated circuits.

Formerly developmental type TA49007.




Parameters:

Technical/Catalog InformationRFG70N06
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C70A
Rds On (Max) @ Id, Vgs14 mOhm @ 70A, 10V
Input Capacitance (Ciss) @ Vds 2250pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs156nC @ 20V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RFG70N06
RFG70N06



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