Position: Home  > All Categories> Integrated Circuits (ICs) > RFG75N05E

RFG75N05E

Features: • 75A, 50V• rDS(ON) = 0.008W• Electrostatic Discharge Rated• UIS Rating Curve (Single Pulse)• 175oC Operating Temperature• Temperature Compensated PSPICE® Model ProvidedSpecifications RFG75N05E UNITS Drain to Source Voltage (Note 1) VDSS...

product image

RFG75N05E Picture
See larger image
SeekIC No. : 004476539 Detail

RFG75N05E: Features: • 75A, 50V• rDS(ON) = 0.008W• Electrostatic Discharge Rated• UIS Rating Curve (Single Pulse)• 175oC Operating Temperature• Temperature Compensated PSPIC...

RFG75N05E Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
RFG75N05E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 75A, 50V
• rDS(ON) = 0.008W
• Electrostatic Discharge Rated
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• Temperature Compensated PSPICE® Model Provided


Specifications

  RFG75N05E UNITS
Drain to Source Voltage (Note 1) VDSS 50 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 50 V
Continuous Drain Current ID 75 A
Pulsed Drain Current (Note 3) IDM 200 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation PD 240 W
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID 1.6 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 150 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFG75N05E. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs RFG75N05E are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA09821.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Memory Cards, Modules
WT32
VTL5C7
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Discrete Semiconductor Products
T508N12TOF
MUR20040
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Isolators
HCPL062N
HCPL316J
View more