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RFL1N12

Features: • 1A, 120V and 150V• rDS(ON) = 1.9W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier Device• Related Literature- TB334 Guidelines for Soldering Surface ...

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RFL1N12: Features: • 1A, 120V and 150V• rDS(ON) = 1.9W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedanc...

RFL1N12 Data Sheet

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Part Number:
RFL1N12
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1A, 120V and 150V
• rDS(ON) = 1.9W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

  RFL1N12L RFL1N15L UNITS
Drain to Source Voltage (Note 1) VDSS 120 150 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 120 150 V
Continuous Drain Curren ID 1 1 A
Pulsed Drain Current (Note 3) IDM 5 5 V
Maximum Power Dissipation PD ±20 ±20 V
Linear Derating Factor 0.0667 0.0667 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 0.0667 0.0667 W/oC
Leads at 0.063in (1.6mm) from Case for 10s.TL 3030 300 o C
Leads at 0.063in (1.6mm) from Case for 10s. TL 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFL1N12 designed for applications such
as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.These types RFL1N12 can be operated directly from integrated circuits.




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