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RFL2N06

Features: • 2A, 50V and 60V• rDS(ON) = 0.95W• SOA is Power-Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier Device• Related Literature- TB334 Guidelines for Soldering Surface M...

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RFL2N06: Features: • 2A, 50V and 60V• rDS(ON) = 0.95W• SOA is Power-Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance...

RFL2N06 Data Sheet

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Part Number:
RFL2N06
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 2A, 50V and 60V
• rDS(ON) = 0.95W
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

  RFL2N05 RLF2N06 UNITS
Drain to Source Voltage (Note 1) VDSS 50 60 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 50 60 V
Gate to Source Voltage VGS ±20 ±20 A
Pulsed IDM 10 10 V
Maximum Power Dissipation PD ±20 ±20 V
Linear Derating Factor 0.0667 0.0667 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 0.0667 0.0667 W/oC
Leads at 0.063in (1.6mm) from Case for 10s.TL 3030 300 o C
Leads at 0.063in (1.6mm) from Case for 10s. TL 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFL2N06 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFL2N06 can be operated directly from integrated
circuits.




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