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RFL2N06L

Features: • 2A, 50V and 60V• rDS(ON) = 0.950Ω• Design Optimized for 5V Gate Drives• Can be Driven from QMOS, NMOS, TTL Circuits• Compatible with Automotive Drive Requirements• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linea...

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SeekIC No. : 004476572 Detail

RFL2N06L: Features: • 2A, 50V and 60V• rDS(ON) = 0.950Ω• Design Optimized for 5V Gate Drives• Can be Driven from QMOS, NMOS, TTL Circuits• Compatible with Automotive Drive ...

RFL2N06L Data Sheet

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Part Number:
RFL2N06L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 2A, 50V and 60V
• rDS(ON) = 0.950Ω
• Design Optimized for 5V Gate Drives
• Can be Driven from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device


Specifications

  RFL2N06L UNITS
Drain to Source Voltage (Note 1) VDSS 50 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 60 V
Continuous Drain Current ID 2 A
Pulsed Drain Current (Note 3) IDM 10 A
Gate to Source Voltage VGS ±10 V
Maximum Power Dissipation PD 8.33 W
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID 0.0667 A
Pulsed Avalanche Rating UIS Figures 6, 14, 15  
Operating and Storage Temperature .TJ, TSTG -55 to 150 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 o C



Description

The RFL2N06L N-channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFL2N06L can be operated directly from integrated circuits




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