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RFM10N50

Features: • 10A, 450V and 500V• rDS(ON) = 0.600WSpecifications RFM10N45 RFM10N50 UNITS Drain to Source Voltage (Note 1) VDSS 450 500 V Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 450 500 V RMS Continuous ID 10 10 A Pulsed Drain Current (Note 3) IDM 20 ...

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SeekIC No. : 004476577 Detail

RFM10N50: Features: • 10A, 450V and 500V• rDS(ON) = 0.600WSpecifications RFM10N45 RFM10N50 UNITS Drain to Source Voltage (Note 1) VDSS 450 500 V Drain to Gate Voltage (RGS = 1MW)...

RFM10N50 Data Sheet

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Part Number:
RFM10N50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 10A, 450V and 500V
• rDS(ON) = 0.600W


Specifications

  RFM10N45 RFM10N50 UNITS
Drain to Source Voltage (Note 1) VDSS 450 500 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 450 500 V
RMS Continuous ID 10 10 A
Pulsed Drain Current (Note 3) IDM 20 20 V
Maximum Power Dissipation PD ±20 ±20 V
Maximum Power Dissipation PD 150 150 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 1.2 1.2 W/oC
Leads at 0.063in (1.6mm) from Case for 10s. TL 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFM10N50 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFM10N50 can be operated directly from integrated circuits.




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