RFM10N12

The features of RFM10N12 are: (1)SOA is power-dissipation limited; (2)nanosecond switching speeds; (3)linear transfer charaxteristics; (4)high input impedance; (5)majority carrier device; (6)high-current, low-inductance package.

The following is about the absolute maximum ratings of RFM10N12: (1)drain-source voltage: 120V; (2)drain-gate voltage, Rgs=1M: 120V; (3)gate-source voltage: ±20V; (4)drain current, RMS continuous: 10A; (5)power dissipation @ Tc=25: 75W, derate abrove Tc=25: 0.6W/; (6)operating and storage temperature: -55 to +150.

The electrical characteristics of the RFM10N12 are: (1)drain-source breakdown voltage: 120V min at ID=1mA, VGS=0; (2)gate thresholad voltage: 2V min and 4V max at VDS=VGS, ID=2mA; (3)zero gate voltage drain: 1A max at VDS=100V; (4)gate-source leakage current: 100nA max at VGS=±20V, VDS=0; (5)static drain-source on resistance: 0.3 max at ID=5A, VGS=10V; (6)input capacitance: 650pF max at VDS=25V, VGS=0V, f=1MHz; (7)output capacitance: 230pF max at VDS=25V, VGS=0V, f=1MHz.