MOSFET TO-220
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 100 V |
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 12 A |
| Resistance Drain-Source RDS (on) : | 0.3 Ohms | Configuration : | Single |
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
| Package / Case : | TO-220AB |
| Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20KW) (Note 1). . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3 . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . PD Linear Derating Factor .. . . . . . . . Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . .. . Tpkg |
RFP12P08 -80 -80 12 30 ±20 75 0.6 -55 to 150 300 260 |
RFP12P10 -100 -100 12 30 ±20 75 0.6 -55 to 150 300 260 |
UNITS V V A A V W W/oC oC oC oC |