MOSFET TO-220AB N-Ch Power
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 50 V |
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 14 A |
| Resistance Drain-Source RDS (on) : | 0.1 Ohms | Configuration : | Single |
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole |
| Package / Case : | TO-220AB |
| RFD14N05, RFD14N05SM, RFP14N05 |
UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 50 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 50 | V |
| Continuous Drain Current ID | 14 | A |
| Pulsed Drain Current (Note 3) IDM | 120 | A |
| Gate to Source Voltage VGS | ±20 | V |
| EAS Power Dissipation PD 25oC |
48 | W |
| Derate above 25o C | 0.32 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ , TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 . Tpkg | 260 | o C |
| Technical/Catalog Information | RFP14N05 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 14A, 10V |
| Input Capacitance (Ciss) @ Vds | 570pF @ 25V |
| Power - Max | 48W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 40nC @ 20V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | RFP14N05 RFP14N05 |