RFP15N08L

The RFP15N08L is an kind of N-Channel enhancement mode silicon gate power feld effect transistor which specilcally designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers, and this performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages. Formerly developmental type TA09804.

The features of RFP15N08L can be summarized as (1)15A, 80V; (2)rDS(ON) = 0.140; (3)design optimized for 5 volt gate drive; (4)can be driven directly from Q-MOS, N-MOS, TTL circuits; (5)SOA is power dissipation limited; (6)175°C rated junction temperature; (7)logic level gate; (8)high input impedance; (9)related literature- TB334 "guidelines for soldering surface mount; (10)components to PC boards".

The absolute maximum ratings of RFP15N08L are (1)drain to source breakdown voltage (Note 1)VDS: 80 V; (2)drain to gate voltage (Note 1)VDGR : 80 V; (3)gate to source voltage VGS: ±10 V; (4)continuous drain current ID: 15 A; (5)pulsed drain current (Note 3) IDM: 40 A; (6)maximum power dissipation PD: 72W, derated above 25°C: 0.48W/°C; (7)operating and storage temperature TJ, TSTG: -55 to 175°C; (8)maximum temperature for soldering leads at 0.063in (1.6mm) from Case for 10s TL: 300°C, package body for 10s, see techbrief 334 Tpkg: 260°C(CAUTION: Stresses above those listed in "Absolute Maximum Ratings"may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?cation is not implied. NOTE: TJ = 25°C to 150°C.).