RFP22N10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.08 Ohms


Features:

• 22A, 100V
• rDS(ON) = 0.080W
• UIS SOA Rating Curve (Single Pulse)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175oC Operating Temperature
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1)	VDSS	100	V
Drain to Gate Voltage (RGS = 20kW)(Note 1)	VDGR	100	V
Gate to Source Voltage	VGS	±20	V
Continuous Drain Current	ID	22	A
Pulsed Drain Current	IDM	50	A
Maximum Power Dissipation	PD	100	W
Linear Derating Factor		0.67	W/
Operating and Storage Temperature	TJ , TSTG	-55 to175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	T L Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

These N-Channel power MOSFETs RFP22N10 are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. RFP22N10 were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors RFP22N10 can be operated directly from integrated circuits.

Formerly developmental type TA9845.

Parameters:

Technical/Catalog Information	RFP22N10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	22A
Rds On (Max) @ Id, Vgs	80 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds	-
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 20V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFP22N10 RFP22N10